Abstract

This thesis presents experimental work developing silicon nanocrystal based light emitting devices for silicon photonics. The chapters are organized as follows: In chapter 2, fabrication and characterization of silicon nanocrystal based devices are presented. In collaboration with Intel Corporation and Bruno Kessler Foundation and thanks to the support of European Commission through the project No. ICT-FP7-224312 HELIOS and through the project No. ICT-FP7-248909 LIMA, it is shown that layers and devices containing silicon nanocrystals can be formed in a production silicon-fab on 4 and 8 inch silicon substrates via PECVD and subsequent thermal annealing. Devices produced by single layer and multilayer deposition are studied and compared in terms of structural properties, conduction mechanisms and electroluminescence properties. Power efficiency is evaluated and studied in order to understand the relation between exciton recombination and electrical conduction. A band gap engineering method is proposed in order to better control carrier injection and light emission in order to enhance the electroluminescence power efficiency. In chapter 3, the power efficiency of silicon nanocrystal light-emitting devices is studied in alternating current regime. An experimental method based on impedance spectroscopy is proposed and an electrical model based on the constant phase element (CPE) is derived. It is, then, given a physical interpretation of the electrical model proposed by considering the disordered composition of the active material. The electrical model is further generalized for many kinds of waveforms applied and it is generalized for the direct current regime. At the end, time-resolved electroluminescence and carrier injection in alternate current regime are presented. In chapter 4, erbium implanted silicon rich oxide based devices are presented. The investigation of opto-electrical properties of LED in direct current and alternate current regime are studied in order to understand the injection mechanism and estimate the energy transfer between silicon nanocrystals and erbium. At the end a device layout and process flow for an erbium doped silicon nanocrystal based laser structure are shown. In chapter 5, some other applications of silicon nanocrystal are presented. An example of all-silicon solar cell is shown. The photovoltaic properties and carrier transport of silicon nanocrystal based solar are studied. At the end, the combination of emitting and absorbing properties of silicon nanocrystal based LED are used to develop an all-silicon based optical transceiver.