Abstract

The study presented in this thesis is focused on the investigation of Arsenic ultra-shallow distributions in Si for applications as source-drain extension dopant in CMOS technology. Using the Ultra-low energy SIMS measurements the evolution of arsenic shallow distribution was investigated with reference to the metastable electrical activation and the successive deactivation under moderate thermal treatment (550-700°C). Three different approaches to form As USJ were investigated to understand their physical mechanisms to verify their possible application in next generation microelectronics devices. First two activation approaches were based on low energy beamline ion implanted material. The first one is the low temperature (550°C) solid-phase epitaxial re-growth and the second activation approach is a sub-melt laser annealing at different temperatures. A range of deactivation studies was performed using these two classes of material with more attention given to the laser annealed ones. Plasma ion immersion implantation together with the LA was considered as the third approach of arsenic ultra-shallow junction formation. Samples created by AsH3+ plasma were investigated with respect to arsenic distribution, silicon oxide thickness and arsenic local order using SIMS, INAA, and EXAFS analysis.